FQN1N50CTA
MOSFET N-CH 500V 380MA TO92-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQN1N50CTA is an N-Channel QFET® MOSFET designed for applications requiring high voltage switching. This component features a Drain-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) of 380mA at 25°C. The Rds On is specified at a maximum of 6 Ohm at 190mA with a 10V Vgs. Key parameters include a Gate Charge (Qg) of 6.4 nC (max) at 10V and Input Capacitance (Ciss) of 195 pF (max) at 25V. Power dissipation is rated at 890mW (Ta) and 2.08W (Tc). The device is housed in a TO-92-3 package and is available in Cut Tape (CT). This MOSFET is suitable for use in power supplies and lighting control systems.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 380mA (Tc) |
| Rds On (Max) @ Id, Vgs | 6Ohm @ 190mA, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 890mW (Ta), 2.08W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-92-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.4 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 195 pF @ 25 V |
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