FQL40N50
MOSFET N-CH 500V 40A TO264-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQL40N50 is a 500V N-Channel Power MOSFET designed for high-efficiency power switching applications. This through-hole component features a continuous drain current capability of 40A at 25°C (Tc) and a maximum power dissipation of 460W (Tc). Key electrical parameters include a drain-source voltage (Vdss) of 500V, a low Rds(on) of 110mOhm maximum at 20A and 10V gate drive, and a gate charge (Qg) of 200 nC maximum at 10V. The input capacitance (Ciss) is 7500 pF maximum at 25V. The TO-264-3 package provides robust thermal performance. This MOSFET is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-264-3, TO-264AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 40A (Tc) |
| Rds On (Max) @ Id, Vgs | 110mOhm @ 20A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 460W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-264-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 200 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 25 V |
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