FQI7N60TU
MOSFET N-CH 600V 7.4A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQI7N60TU is a QFET® series N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a 600 V drain-source voltage (Vdss) and a continuous drain current (Id) of 7.4 A at 25°C (Tc). With a maximum Rds On of 1 Ohm at 3.7 A and 10 Vgs, it offers low conduction losses. The device boasts a low gate charge (Qg) of 38 nC at 10 V and an input capacitance (Ciss) of 1430 pF at 25 V. Power dissipation capabilities include 3.13 W at ambient temperature (Ta) and 142 W at case temperature (Tc). The FQI7N60TU is housed in a TO-262-3 Long Leads, I2PAK, TO-262AA package, suitable for through-hole mounting. It operates across a temperature range of -55°C to 150°C (TJ) and supports a gate-source voltage (Vgs) range of ±30 V. This MOSFET is commonly utilized in power supplies, motor control, and lighting solutions.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: 17 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 142W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 38 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1430 pF @ 25 V |
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