FQI6N40CTU
MOSFET N-CH 400V 6A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQI6N40CTU is a 400V N-Channel Power MOSFET in a TO-262 (I2PAK) package. This device offers a continuous drain current of 6A at 25°C (Tc) and a maximum power dissipation of 73W (Tc). Featuring a low Rds(on) of 1 Ohm at 3A and 10V, it is designed for efficient power switching applications. Key parameters include a Vds of 400V, a gate charge (Qg) of 20 nC (max) at 10V, and an input capacitance (Ciss) of 625 pF (max) at 25V. The operating temperature range is -55°C to 150°C (TJ). This component is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 3A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 73W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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