FQI4P40TU
MOSFET P-CH 400V 3.5A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQI4P40TU is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 3.5A at 25°C. With a maximum On-Resistance (Rds On) of 3.1 Ohm at 1.75A and 10V Vgs, it offers efficient power handling. The FQI4P40TU has a gate charge of 23 nC at 10V and an input capacitance (Ciss) of 680 pF at 25V. Maximum power dissipation is rated at 3.13W (Ta) and 85W (Tc). The component is housed in a TO-262 (I2PAK) package with through-hole mounting. This MOSFET is suitable for use in industrial and power supply applications. Operating temperature range is -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1Ohm @ 1.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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