FQI4N20LTU
MOSFET N-CH 200V 3.8A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQI4N20LTU is an N-Channel MOSFET designed for high voltage applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 3.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.35 Ohms at 1.9A and 10V, it offers efficient switching characteristics. The device utilizes Metal Oxide technology and is provided in a TO-262 (I2PAK) through-hole package, suitable for applications requiring robust thermal management with power dissipation ratings of 3.13W (Ta) and 45W (Tc). Key parameters include a gate charge (Qg) of 5.2 nC at 5V and input capacitance (Ciss) of 310 pF at 25V. This MOSFET is commonly utilized in power supply units, lighting control, and general-purpose switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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