FQI3P50TU
MOSFET P-CH 500V 2.7A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQI3P50TU is a P-Channel Power MOSFET designed for high-voltage applications. Featuring a Drain-Source Voltage (Vdss) of 500V and a continuous drain current (Id) of 2.7A at 25°C (Tc), this component offers a maximum on-resistance (Rds On) of 4.9 Ohm at 1.35A and 10V gate drive. The device exhibits a gate charge (Qg) of 23 nC maximum at 10V and an input capacitance (Ciss) of 660 pF maximum at 25V. With a power dissipation capability of 85W at 25°C (Tc) and 3.13W at 25°C (Ta), the FQI3P50TU is housed in a TO-262-3 Long Leads (I2PAK) package suitable for through-hole mounting. This MOSFET is utilized in power supply units, industrial motor control, and lighting applications. It operates across a temperature range of -55°C to 150°C (TJ) and has a maximum gate-source voltage (Vgs) rating of ±30V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 85W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
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