FQI34P10TU
MOSFET P-CH 100V 33.5A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® FQI34P10TU is a P-Channel MOSFET with a drain-source voltage (Vdss) of 100V. This device features a continuous drain current (Id) of 33.5A at 25°C (Tc) and a maximum Rds On of 60mOhm at 16.75A and 10V drive voltage. The gate charge (Qg) is specified at 110 nC maximum at 10V, with input capacitance (Ciss) at 2910 pF maximum at 25V. Power dissipation is 3.75W (Ta) and 155W (Tc). The FQI34P10TU is housed in a TO-262-3 Long Leads (I2PAK) package, suitable for through-hole mounting. It operates across a junction temperature range of -55°C to 175°C and has a Vgs(th) of 4V at 250µA, with a maximum Vgs rating of ±25V. This component is utilized in applications such as power supply design and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 33.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 60mOhm @ 16.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 155W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2910 pF @ 25 V |