FQI27P06TU
MOSFET P-CH 60V 27A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQI27P06TU is a P-Channel Power MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 27 A at 25°C (Tc). With a low on-resistance of 70 mOhm maximum at 13.5 A and 10 V Vgs, it offers efficient power handling. The MOSFET exhibits a Gate Charge (Qg) of 43 nC maximum at 10 V and an Input Capacitance (Ciss) of 1400 pF maximum at 25 V. It is housed in an I2PAK package, suitable for through-hole mounting, and supports a maximum power dissipation of 3.75 W (Ta) or 120 W (Tc). The operating temperature range is -55°C to 175°C (TJ). This component is utilized in various industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) |
| Rds On (Max) @ Id, Vgs | 70mOhm @ 13.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.75W (Ta), 120W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | I2PAK |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 43 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1400 pF @ 25 V |
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