FQI12N50TU
MOSFET N-CH 500V 12.1A I2PAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQI12N50TU is a 500V N-Channel Power MOSFET designed for efficient power switching applications. This component features a continuous drain current (Id) of 12.1A at 25°C (Tc) and a low on-resistance (Rds On) of 490mOhm maximum at 6.05A, 10V. The FQI12N50TU offers a gate charge (Qg) of 51 nC maximum at 10V and an input capacitance (Ciss) of 2020 pF maximum at 25V. With a maximum power dissipation of 179W at 25°C (Tc), this MOSFET is suitable for demanding thermal environments. It is packaged in a TO-262 (I2PAK) through-hole configuration, facilitating robust board mounting. Typical applications include power supplies, lighting, and motor control systems within the industrial and consumer electronics sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-262-3 Long Leads, I2PAK, TO-262AA |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 490mOhm @ 6.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 3.13W (Ta), 179W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-262 (I2PAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 51 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2020 pF @ 25 V |
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