FQH70N10
MOSFET N-CH 100V 70A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQH70N10 is an N-Channel Power MOSFET from the QFET® series, designed for high-efficiency power switching applications. This component features a maximum drain-source voltage (Vdss) of 100V and a continuous drain current (Id) of 70A at 25°C, with a maximum power dissipation of 214W at the same temperature. The low on-resistance (Rds On) of 23mOhm is achieved at 35A and 10V gate-source voltage. Key parameters include a gate charge (Qg) of 110 nC at 10V and input capacitance (Ciss) of 3300 pF at 25V. The device is housed in a TO-247-3 through-hole package and operates across a wide temperature range of -55°C to 175°C. This MOSFET is suitable for use in power supplies, motor control, and industrial automation.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
| Rds On (Max) @ Id, Vgs | 23mOhm @ 35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 214W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 110 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 25 V |
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