FQH44N10
MOSFET N-CH 100V 48A TO247-3Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQH44N10 is a QFET® N-Channel Power MOSFET designed for high-efficiency power switching applications. This component features a Drain-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 48A at 25°C, with a maximum power dissipation of 180W (Tc). Its low on-resistance, specified at 39mOhm maximum at 24A and 10V gate drive, is critical for minimizing conduction losses. The device exhibits a typical gate charge (Qg) of 62 nC at 10V and input capacitance (Ciss) of 1800 pF at 25V, facilitating efficient switching performance. Packaged in a TO-247-3 through-hole configuration, the FQH44N10 operates across a wide temperature range of -55°C to 175°C (TJ). This MOSFET finds application in power supply units, motor control, and various industrial power conversion systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDownload Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 48A (Tc) |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 24A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 180W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-247-3 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 62 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800 pF @ 25 V |
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