FQD9N25TM-SBEK002
MOSFET N-CH 250V 7.4A TO252AAManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD9N25TM-SBEK002 is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous drain current (Id) of 7.4 A at 25°C (Tc). With a maximum Rds(on) of 420 mOhm at 3.7 A and 10 V, it ensures low conduction losses. The device boasts a low gate charge (Qg) of 20 nC at 10 V and input capacitance (Ciss) of 700 pF at 25 V, facilitating fast switching speeds. Power dissipation is rated at 2.5 W (Ta) and 55 W (Tc). The FQD9N25TM-SBEK002 is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for automated assembly. Its operating temperature range is -55°C to 150°C (TJ). This MOSFET is commonly utilized in power supply units, motor control, and lighting applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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