FQD9N25TM-F080
MOSFET N-CH 250V 7.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD9N25TM-F080 is an N-Channel Power MOSFET in a TO-252AA (DPAK) surface mount package. This device features a Drain-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 7.4A at 25°C (Tc). The Rds(On) is specified at a maximum of 420mOhm at 3.7A and 10V gate drive. Key parameters include a typical gate charge (Qg) of 20 nC @ 10V and input capacitance (Ciss) of 700 pF @ 25V. Power dissipation is rated at 55W (Tc) and 2.5W (Ta). The operating temperature range is -55°C to 150°C (TJ). This component is utilized in various applications including power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 420mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 20 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 700 pF @ 25 V |
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