FQD9N08TM
MOSFET N-CH 80V 7.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD9N08TM is an N-Channel Power MOSFET from the QFET® series, packaged in a TO-252AA (DPAK) surface-mount configuration. This device features a Drain-Source Voltage (Vdss) of 80 V and a continuous drain current (Id) of 7.4 A at 25°C (Tc). Its on-resistance (Rds On) is specified at a maximum of 210 mOhm at 3.7 A and 10 V gate drive. Key parameters include a gate charge (Qg) of 7.7 nC (max) at 10 V and input capacitance (Ciss) of 250 pF (max) at 25 V. Power dissipation capabilities are 2.5 W (Ta) and 25 W (Tc). The operating temperature range is -55°C to 150°C (TJ). This component is suitable for applications in power management and switching power supplies. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 210mOhm @ 3.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 80 V |
| Gate Charge (Qg) (Max) @ Vgs | 7.7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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