FQD8N25TF
MOSFET N-CH 250V 6.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD8N25TF is a QFET® series N-Channel Power MOSFET designed for demanding applications. This surface mount device, housed in a TO-252AA (DPAK) package, offers a drain-source voltage (Vdss) of 250V and a continuous drain current (Id) of 6.2A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 550mOhm at 3.1A and 10V drive voltage, and a gate charge (Qg) of 15 nC at 10V. The device features a maximum gate-source voltage (Vgs) of ±30V and an operating temperature range of -55°C to 150°C. With a maximum power dissipation of 2.5W (Ta) and 50W (Tc), the FQD8N25TF is suitable for use in power supply, industrial, and automotive sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 6.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 550mOhm @ 3.1A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 15 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 530 pF @ 25 V |
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