FQD7P20TF
MOSFET P-CH 200V 5.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD7P20TF is a P-Channel Power MOSFET designed for demanding applications. Featuring a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 5.7 A at 25°C (Tc), this component offers robust performance. Its low on-resistance of 690 mOhm at 2.85 A and 10 V (Vgs) minimizes conduction losses. The FQD7P20TF utilizes Metal Oxide technology and is housed in a TO-252AA (DPAK) surface-mount package, facilitating efficient thermal management with a power dissipation of 55W (Tc). Key parameters include a gate charge (Qg) of 25 nC at 10 V and input capacitance (Ciss) of 770 pF at 25 V. This device is suitable for use in power supply, motor control, and lighting applications. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 2.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 770 pF @ 25 V |
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