FQD7P06TM
MOSFET P-CH 60V 5.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD7P06TM is a P-Channel MOSFET from the QFET® series, packaged in a TO-252AA (DPAK) surface mount configuration. This device features a drain-source voltage (Vds) of 60V and a continuous drain current (Id) of 5.4A at 25°C (Tc). Key electrical characteristics include a maximum Rds On of 451mOhm at 2.7A and 10V Vgs, with a gate charge (Qg) of 8.2 nC at 10V. Input capacitance (Ciss) is specified at a maximum of 295 pF at 25V. The device offers a power dissipation of 2.5W (Ta) and 28W (Tc) and operates across a temperature range of -55°C to 150°C. This component is suitable for applications in power management and switching circuits across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 451mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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