FQD7P06TF
MOSFET P-CH 60V 5.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD7P06TF is a P-Channel MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 60 V and a continuous Drain Current (Id) of 5.4 A at 25°C. With a maximum on-resistance (Rds On) of 451 mOhm at 2.7 A and 10 V gate drive, it offers efficient power switching. The FQD7P06TF is housed in a TO-252-3, DPAK surface mount package, facilitating integration into compact designs. Its power dissipation capabilities include 2.5 W (Ta) and 28 W (Tc). Key electrical parameters include a gate charge (Qg) of 8.2 nC and input capacitance (Ciss) of 295 pF. This MOSFET is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 451mOhm @ 2.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 28W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 60 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 295 pF @ 25 V |
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