FQD7N30TF
MOSFET N-CH 300V 5.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
onsemi QFET® FQD7N30TF is a 300V N-Channel power MOSFET in a TO-252AA (DPAK) surface mount package. This device features a continuous drain current of 5.5A at 25°C (Tc) and a low on-resistance of 700mOhm maximum at 2.75A, 10V. The gate charge is specified at 17 nC maximum at 10V, with an input capacitance (Ciss) of 610 pF maximum at 25V. The MOSFET is rated for a maximum power dissipation of 50W (Tc) and operates across a temperature range of -55°C to 150°C (TJ). This component is suitable for applications in power supplies, motor control, and lighting.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 700mOhm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 610 pF @ 25 V |
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