FQD7N20TM
MOSFET N-CH 200V 5.3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD7N20TM is a 200V N-Channel Power MOSFET designed for efficient switching applications. This TO-252AA package (DPAK) device offers a continuous drain current of 5.3A at 25°C (Tc) and a low on-resistance of 690mOhm maximum at 2.65A and 10V Vgs. Key parameters include a Gate Charge (Qg) of 10 nC maximum at 10V Vgs and an Input Capacitance (Ciss) of 400 pF maximum at 25V Vds. With a maximum power dissipation of 45W at 25°C (Tc), the FQD7N20TM is suitable for use in power supplies, motor control, and lighting applications across various industrial sectors. The device operates within a temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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