FQD7N20TF
MOSFET N-CH 200V 5.3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD7N20TF is an N-Channel QFET® MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 5.3A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 690mOhm at 2.65A and 10V, it offers low conduction losses. The MOSFET is housed in a TO-252AA (DPAK) surface mount package, facilitating integration into compact board designs. Key parameters include a Gate Charge (Qg) of 10nC at 10V and an Input Capacitance (Ciss) of 400pF at 25V. Its robust construction allows for operation across a wide temperature range of -55°C to 150°C (TJ), with a maximum power dissipation of 45W at 25°C (Tc). This component is suitable for use in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 690mOhm @ 2.65A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 10 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 400 pF @ 25 V |
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