FQD7N20LTF
MOSFET N-CH 200V 5.5A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD7N20LTF is an N-Channel Power MOSFET designed for demanding applications. This device features a drain-source breakdown voltage (Vdss) of 200 V and a continuous drain current (Id) of 5.5 A at 25°C (Tc). With a maximum on-resistance (Rds On) of 750 mOhm at 2.75 A and 10 V, it offers efficient switching. The FQD7N20LTF has a gate charge (Qg) of 9 nC at 5 V and input capacitance (Ciss) of 500 pF at 25 V. It supports a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. The MOSFET is packaged in a TO-252AA (DPAK) surface mount configuration and is supplied on a Tape & Reel (TR). Power dissipation is rated at 2.5 W (Ta) and 45 W (Tc). This component is suitable for use in power supply, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 750mOhm @ 2.75A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 9 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 500 pF @ 25 V |
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