FQD7N10LTF
MOSFET N-CH 100V 5.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD7N10LTF is an N-Channel Power MOSFET designed for efficient switching applications. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous Drain Current (Id) of 5.8 A at 25°C (Tc). With a maximum Rds On of 350 mOhm at 2.9 A and 10 V Vgs, it offers low conduction losses. The MOSFET utilizes Metal Oxide technology and is packaged in a TO-252AA (DPAK) surface mount configuration, supplied on a Tape & Reel. Key parameters include a gate charge (Qg) of 6 nC at 5 V and input capacitance (Ciss) of 290 pF at 25 V. Maximum power dissipation is rated at 2.5 W (Ta) and 25 W (Tc). This component is suitable for use in power management, industrial automation, and consumer electronics.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 5.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 350mOhm @ 2.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 25 V |
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