FQD6P25TM
MOSFET P-CH 250V 4.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQD6P25TM is a P-Channel QFET® MOSFET designed for demanding applications. This device features a Drain-to-Source Voltage (Vdss) of 250V and offers a continuous drain current (Id) of 4.7A at 25°C (Tc). With a maximum Rds(on) of 1.1 Ohm at 2.35A and 10V, it provides efficient power switching. The FQD6P25TM is packaged in a TO-252AA (DPAK) surface mount configuration, facilitating integration into compact designs. Key electrical characteristics include a gate charge (Qg) of 27 nC at 10V and input capacitance (Ciss) of 780 pF at 25V. Its operating temperature range is -55°C to 150°C (TJ), and it supports a Vgs(th) of 5V at 250µA and a maximum Vgs of ±30V. This MOSFET is suitable for use in power supply, motor control, and audio amplifier applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.1Ohm @ 2.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 55W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 27 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 780 pF @ 25 V |
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