FQD6N25TM
MOSFET N-CH 250V 4.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD6N25TM is a N-Channel Power MOSFET designed for demanding applications. This component features a Drain-to-Source Voltage (Vdss) of 250 V and a continuous Drain Current (Id) of 4.4A at 25°C (Tc). With a maximum Drain-Source On-Resistance (Rds On) of 1 Ohm at 2.2A and 10V, it offers efficient power handling. The device supports a Gate-Source Voltage (Vgs) range of ±30V and a threshold voltage (Vgs(th)) of 5V at 250µA. Key capacitances include Input Capacitance (Ciss) up to 300 pF at 25V and Gate Charge (Qg) of 8.5 nC at 10V. The FQD6N25TM offers a maximum power dissipation of 2.5W (Ta) or 45W (Tc). It is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63 surface mount package and supplied on tape and reel. This MOSFET is suitable for use in power supply and power switching applications across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 300 pF @ 25 V |
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