FQD630TF
MOSFET N-CH 200V 7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD630TF is an N-Channel MOSFET from the QFET® series, housed in a TO-252AA (DPAK) package. This device offers a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 7A at 25°C (Tc). Key electrical characteristics include a maximum on-resistance (Rds On) of 400mOhm at 3.5A and 10V gate drive. The FQD630TF features a gate charge (Qg) of 25nC at 10V and an input capacitance (Ciss) of 550pF at 25V. Power dissipation is rated at 2.5W (Ta) and 46W (Tc). This component is suitable for surface mounting and operates within a temperature range of -55°C to 150°C. The FQD630TF finds application in power management and switching circuits across various industrial sectors.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 7A (Tc) |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 46W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 25 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 550 pF @ 25 V |
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