FQD5P20TF
MOSFET P-CH 200V 3.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5P20TF is a P-Channel QFET® series MOSFET designed for demanding applications. This TO-252AA packaged device offers a Drain to Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3.7A at 25°C (Tc). Featuring a low On-Resistance (Rds On) of 1.4 Ohms maximum at 1.85A and 10V Vgs, this component is suitable for power switching and control in industrial and automotive sectors. The MOSFET exhibits a Gate Charge (Qg) of 13 nC maximum at 10V and Input Capacitance (Ciss) of 430 pF maximum at 25V. Maximum power dissipation is rated at 2.5W (Ta) and 45W (Tc). The device operates across a temperature range of -55°C to 150°C.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.85A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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