FQD5P10TM
MOSFET P-CH 100V 3.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD5P10TM is a P-Channel Power MOSFET designed for demanding applications. Featuring a Drain-to-Source Voltage (Vdss) of 100V and a continuous Drain Current (Id) of 3.6A at 25°C (Tc), this component offers robust performance. Its low on-resistance (Rds On) of 1.05Ohm is achieved at 1.8A and 10V gate drive. The device is packaged in a TO-252AA (DPAK) surface mount configuration, suitable for efficient thermal management with a maximum power dissipation of 25W (Tc). Key parameters include an input capacitance (Ciss) of 250pF at 25V and a gate charge (Qg) of 8.2nC at 10V. The operating temperature range is -55°C to 150°C. This power MOSFET finds application in various industries including industrial automation and power supply units.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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