FQD5P10TF
MOSFET P-CH 100V 3.6A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD5P10TF is a P-Channel MOSFET designed for demanding applications. This device features a Drain-Source Voltage (Vdss) of 100 V and a continuous drain current (Id) of 3.6A (Tc) at 25°C. The Rds On is specified at a maximum of 1.05 Ohms at 1.8A and 10V gate drive. With a gate charge (Qg) of 8.2 nC (max) at 10V and input capacitance (Ciss) of 250 pF (max) at 25V, this MOSFET offers efficient switching characteristics. It supports a gate-source voltage (Vgs) range of ±30V and has a threshold voltage (Vgs(th)) of 4V (max) at 250µA. The device is housed in a TO-252AA DPAK package, suitable for surface mounting. Power dissipation is rated at 25W (Tc) or 2.5W (Ta). This component is utilized in power management, industrial, and automotive sectors. It operates across a temperature range of -55°C to 150°C (TJ) and is supplied on a tape and reel.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.6A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.05Ohm @ 1.8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 25W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 100 V |
| Gate Charge (Qg) (Max) @ Vgs | 8.2 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 250 pF @ 25 V |
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