FQD5N60CTM-WS
MOSFET N-CH 600V 2.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N60CTM-WS is a QFET® series N-Channel MOSFET designed for high-efficiency power switching applications. This device features a 600V drain-source breakdown voltage (Vdss) and supports a continuous drain current (Id) of 2.8A at 25°C (Tc). With a maximum Rds(on) of 2.5 Ohm at 1.4A and 10V Vgs, it offers low conduction losses. The TO-252AA (DPAK) surface mount package facilitates integration into compact designs, suitable for applications in power supplies, lighting, and motor control. Key electrical characteristics include a gate charge (Qg) of 19 nC (max) at 10V and input capacitance (Ciss) of 670 pF (max) at 25V. The operating temperature range is -55°C to 150°C (TJ). The component is supplied on a tape and reel for automated assembly.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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