FQD5N60CTF
MOSFET N-CH 600V 2.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD5N60CTF is an N-Channel Power MOSFET designed for demanding applications. This device features a 600V drain-source breakdown voltage (Vdss) and a continuous drain current (Id) of 2.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 2.5 Ohms at 1.4A and 10V gate drive, it offers efficient switching. The FQD5N60CTF boasts a low gate charge (Qg) of 19 nC at 10V and an input capacitance (Ciss) of 670 pF at 25V. Its maximum power dissipation is 2.5W (Ta) and 49W (Tc). Packaged in a TO-252AA (DPAK) surface mount configuration and supplied on tape and reel, this MOSFET is suitable for use in power supply units, industrial motor control, and lighting applications. It operates within a temperature range of -55°C to 150°C (TJ) with a maximum gate-source voltage (Vgs) of ±30V.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.5Ohm @ 1.4A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 49W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V |
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