FQD5N50CTM-WS
MOSFET N-CHANNEL 500V 4A TO252Manufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N50CTM-WS is an N-Channel Power MOSFET designed for demanding applications. This component features a 500V drain-source voltage (Vdss) and a continuous drain current (Id) of 4A at 25°C (Tc). With a maximum Rds(on) of 1.4 Ohms at 2A and 10V, it offers efficient switching characteristics. The device utilizes Metal Oxide technology and is packaged in a TO-252 (DPAK) surface-mount configuration, supplied on tape and reel. Key parameters include a gate charge (Qg) of 24 nC at 10V and input capacitance (Ciss) of 625 pF at 25V. The maximum power dissipation is rated at 2.5W (Ta). This MOSFET is suitable for use in power supply units, motor control, and general-purpose power switching applications. Operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252 (DPAK) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
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