FQD5N50CTF
MOSFET N-CH 500V 4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQD5N50CTF is a QFET® series N-Channel Power MOSFET designed for efficient power switching applications. This component features a maximum drain-source voltage (Vdss) of 500V and a continuous drain current (Id) of 4A at 25°C (Tc). With a low on-resistance (Rds On) of 1.4 Ohm maximum at 2A and 10V, it minimizes conduction losses. The device has a gate charge (Qg) of 24 nC at 10V and an input capacitance (Ciss) of 625 pF at 25V. Offered in a TO-252AA (DPAK) surface mount package, it provides a maximum power dissipation of 48W at 25°C (Tc). Operating across a wide temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for use in power supplies, lighting, and motor control systems.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 48W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 625 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
