FQD5N40TM
MOSFET N-CH 400V 3.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N40TM is an N-Channel QFET® series MOSFET designed for efficient power switching applications. This device features a Drain-Source Voltage (Vdss) of 400V and a continuous drain current (Id) of 3.4A at 25°C (Tc). With a maximum On-Resistance (Rds On) of 1.6 Ohms at 1.7A and 10V Vgs, it offers low conduction losses. The FQD5N40TM is packaged in a TO-252AA (DPAK) surface-mount configuration, suitable for high-density board designs. Key parameters include a Gate Charge (Qg) of 13 nC (max) at 10V and an input capacitance (Ciss) of 460 pF (max) at 25V. Power dissipation is rated at 45W (Tc) and 2.5W (Ta). This component is commonly utilized in power supply units, lighting solutions, and motor control systems.
Additional Information
Series: QFET®RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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