FQD5N40TF
MOSFET N-CH 400V 3.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N40TF is an N-Channel Power MOSFET from the QFET® series. This component features a Drain-Source Voltage (Vdss) of 400V and a continuous Drain Current (Id) of 3.4A at 25°C (Tc). It is designed for surface mounting in the TO-252AA (DPAK) package. The Rds On is specified at a maximum of 1.6 Ohm at 1.7A and 10V gate drive. Key parameters include a Gate Charge (Qg) of 13 nC typical at 10V and an Input Capacitance (Ciss) of 460 pF maximum at 25V. Maximum power dissipation is 2.5W (Ta) and 45W (Tc). This device is suitable for applications in power supplies, lighting, and motor control.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.6Ohm @ 1.7A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 460 pF @ 25 V |
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