FQD5N30TF
MOSFET N-CH 300V 4.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N30TF is a QFET® series N-Channel MOSFET designed for demanding applications. This device features a 300 V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 4.4 A at 25°C. With a maximum on-resistance (Rds On) of 900 mOhm at 2.2 A and 10 V, it offers efficient switching. The MOSFET is housed in a TO-252AA (DPAK) surface mount package, facilitating integration into compact designs. Key electrical parameters include a gate charge (Qg) of 13 nC at 10 V and input capacitance (Ciss) of 430 pF at 25 V. Power dissipation is rated at 2.5 W (Ta) and 45 W (Tc). This component is utilized in industrial power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 900mOhm @ 2.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 300 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 430 pF @ 25 V |
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