FQD5N20LTF
MOSFET N-CH 200V 3.8A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi FQD5N20LTF is an N-Channel Power MOSFET from the QFET® series, designed for efficient power switching applications. This component features a drain-source voltage (Vdss) of 200V and a continuous drain current (Id) of 3.8A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.2Ohm at 1.9A and 10V Vgs, it offers low conduction losses. The device supports drive voltages of 5V and 10V, and exhibits a typical gate charge (Qg) of 6.2 nC at 5V. Input capacitance (Ciss) is rated at a maximum of 325 pF at 25V. The FQD5N20LTF is packaged in a TO-252AA (DPAK) surface-mount package, suitable for automated assembly. Power dissipation capabilities are 2.5W (Ta) and 37W (Tc). It operates within a temperature range of -55°C to 150°C (TJ). This component is commonly utilized in power supplies, motor control, and lighting applications.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.8A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 1.9A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 325 pF @ 25 V |
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