FQD5N15TM
MOSFET N-CH 150V 4.3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi FQD5N15TM, an N-Channel QFET® MOSFET, offers a 150V drain-source breakdown voltage and a continuous drain current of 4.3A at 25°C (Tc). This device features a low on-resistance of 800mOhm maximum at 2.15A and 10V Vgs, with a gate charge of 7nC maximum at 10V. The input capacitance (Ciss) is 230pF maximum at 25V. Designed for surface mounting in the TO-252AA (DPAK) package, it dissipates up to 30W at 25°C (Tc) and 2.5W at 25°C (Ta). The operating temperature range is -55°C to 150°C. This component is suitable for various power management applications across industrial and automotive sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 4.3A (Tc) |
| Rds On (Max) @ Id, Vgs | 800mOhm @ 2.15A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±25V |
| Drain to Source Voltage (Vdss) | 150 V |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 230 pF @ 25 V |
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