FQD4P40TM-AM002
MOSFET P-CH 400V 2.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD4P40TM-AM002 is a P-Channel MOSFET designed for demanding applications. This device features a 400V drain-source breakdown voltage and a continuous drain current of 2.7A at 25°C (Tc). With a maximum Rds(on) of 3.1 Ohm at 1.35A and 10V Vgs, it offers efficient switching performance. The TO-252AA package provides a robust surface-mount solution with a maximum power dissipation of 50W at 25°C (Tc). Key parameters include a gate charge (Qg) of 23 nC and input capacitance (Ciss) of 680 pF, both specified at 10V and 25V respectively. This component is suitable for use in power supply, lighting, and industrial controls. It operates across a wide temperature range of -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1Ohm @ 1.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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