FQD4P40TF
MOSFET P-CH 400V 2.7A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD4P40TF is a P-Channel Power MOSFET in a TO-252AA (DPAK) package, designed for demanding applications. This device features a 400V Drain-to-Source Voltage (Vdss) and a continuous drain current of 2.7A at 25°C (Tc). With a maximum on-resistance (Rds On) of 3.1 Ohms at 1.35A and 10V Vgs, it offers efficient power switching. The FQD4P40TF exhibits a gate charge (Qg) of 23 nC at 10V and input capacitance (Ciss) of 680 pF at 25V. It supports a maximum gate-source voltage (Vgs) of ±30V and has a threshold voltage (Vgs(th)) of 5V at 250µA. Power dissipation is rated at 2.5W (Ta) and 50W (Tc). This MOSFET is suitable for use in industrial and power supply applications. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.7A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.1Ohm @ 1.35A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 400 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 25 V |
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