FQD4P25TM-WS
MOSFET P-CH 250V 3.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi QFET® FQD4P25TM-WS is a P-Channel MOSFET designed for power switching applications. This device features a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current (Id) of 3.1A at 25°C (Tc). With a maximum Rds On of 2.1 Ohms at 1.55A and 10V, it offers efficient conduction. The MOSFET is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, suitable for surface mount configurations. Key parameters include a gate charge (Qg) of 14 nC at 10V and input capacitance (Ciss) of 420 pF at 25V. Power dissipation is rated at 2.5W (Ta) and 45W (Tc). This component is utilized in industries such as industrial automation, renewable energy systems, and power supplies.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1.55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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