FQD4P25TM
MOSFET P-CH 250V 3.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD4P25TM is a P-Channel MOSFET engineered for high-voltage switching applications. Featuring a Drain-to-Source Voltage (Vdss) of 250V and a continuous drain current capability of 3.1A at 25°C (Tc), this component offers robust performance. Its low on-resistance (Rds On) of 2.1 Ohms maximum at 1.55A and 10V drive voltage, coupled with a gate charge (Qg) of 14 nC maximum at 10V, ensures efficient operation.
The FQD4P25TM is presented in a TO-252AA package, also known as DPAK, facilitating surface mounting. Power dissipation is rated at 2.5W (Ta) and 45W (Tc). This MOSFET is suitable for use in power supply units, motor control, and general-purpose switching applications across various industrial sectors. The operating temperature range is -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 2.1Ohm @ 1.55A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 45W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 420 pF @ 25 V |
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