FQD4N25TM-WS
MOSFET N-CH 250V 3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi QFET® FQD4N25TM-WS is an N-Channel Power MOSFET designed for high-efficiency switching applications. This component features a Drain-Source Voltage (Vdss) of 250V and a continuous Drain Current (Id) of 3A at 25°C (Tc). With a low on-resistance of 1.75 Ohms maximum at 1.5A and 10V Vgs, it minimizes conduction losses. Key parameters include a Gate Charge (Qg) of 5.6 nC maximum at 10V and an Input Capacitance (Ciss) of 200 pF maximum at 25V. The device is packaged in a TO-252AA (DPAK) surface mount package, suitable for automated assembly. Power dissipation is rated at 2.5W (Ta) and 37W (Tc). This MOSFET is utilized across various industries, including industrial power supplies and consumer electronics.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.75Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 37W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 250 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 200 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
