FQD4N20TM
MOSFET N-CH 200V 3A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD4N20TM is an N-Channel Power MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.4 Ohm at 1.5A and 10V Vgs, it offers low conduction losses. The device is housed in a TO-252AA (DPAK) surface-mount package, facilitating high-density board designs. Key parameters include a Gate Charge (Qg) of 6.5 nC and Input Capacitance (Ciss) of 220 pF. Power dissipation capabilities are rated at 2.5W (Ta) and 30W (Tc). This MOSFET is suitable for use in various industrial and consumer electronics sectors.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.4Ohm @ 1.5A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.5 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 220 pF @ 25 V |