FQD4N20LTM
MOSFET N-CH 200V 3.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® series FQD4N20LTM is an N-Channel Power MOSFET designed for high-efficiency switching applications. Featuring a Drain-Source Voltage (Vdss) of 200 V and a continuous Drain Current (Id) of 3.2 A at 25°C (Tc), this device offers a maximum on-resistance (Rds On) of 1.35 Ohms at 1.6 A and 10 Vgs. The TO-252AA (DPAK) package facilitates surface mounting and supports a maximum power dissipation of 30 W at 25°C (Tc). Key parameters include a gate charge (Qg) of 5.2 nC and input capacitance (Ciss) of 310 pF, with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. This component is commonly utilized in power supply units, lighting, and industrial motor control. The FQD4N20LTM is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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