FQD4N20LTF
MOSFET N-CH 200V 3.2A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD4N20LTF is an N-Channel Power MOSFET designed for demanding applications. This component features a Drain-Source Voltage (Vdss) of 200V and a continuous Drain Current (Id) of 3.2A at 25°C (Tc). With a maximum Rds On of 1.35 Ohms at 1.6A and 10V Vgs, it offers efficient switching characteristics. The device supports a Gate-Source Voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 2V at 250µA. Typical applications include power supplies, motor control, and lighting systems. The surface mount TO-252AA package is supplied on tape and reel, facilitating automated assembly. Key parameters include Input Capacitance (Ciss) of 310pF (max) at 25V and Gate Charge (Qg) of 5.2nC (max) at 5V, contributing to its high-frequency performance. Power dissipation is rated at 30W (Tc) and 2.5W (Ta).
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3.2A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.35Ohm @ 1.6A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 30W (Tc) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Gate Charge (Qg) (Max) @ Vgs | 5.2 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 310 pF @ 25 V |
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