FQD3P50TM-F085
MOSFET P-CH 500V 2.1A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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The onsemi QFET® FQD3P50TM-F085 is a P-Channel MOSFET designed for high-voltage applications. This device features a Drain-to-Source Voltage (Vdss) of 500 V and a continuous Drain Current (Id) capability of 2.1 A at 25°C (Tc). With a maximum Rds On of 4.9 Ohms at 1.05 A and 10 V, it offers efficient power switching. The FQD3P50TM-F085 is packaged in a TO-252-3, DPAK (2 Leads + Tab), SC-63, surface mount configuration, suitable for automated assembly processes. Its power dissipation is rated at 2.5 W (Ta) and 50 W (Tc). This component is qualified to AEC-Q101 standards, making it suitable for automotive applications, as well as industrial power control and power supply designs. The operating temperature range is from -55°C to 150°C (TJ).
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.1A (Tc) |
| Rds On (Max) @ Id, Vgs | 4.9Ohm @ 1.05A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Grade | Automotive |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 500 V |
| Gate Charge (Qg) (Max) @ Vgs | 23 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 660 pF @ 25 V |
| Qualification | AEC-Q101 |
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