FQD3N60TM
MOSFET N-CH 600V 2.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
Quality Control: Learn More
The onsemi FQD3N60TM from the QFET® series is a 600V N-Channel Power MOSFET designed for surface mount applications. This TO-252AA packaged device offers a continuous drain current of 2.4A at 25°C (Tc) and a maximum power dissipation of 50W (Tc). Key electrical characteristics include a Vdss of 600V, a maximum Rds(on) of 3.6 Ohms at 1.2A and 10V, and a gate charge (Qg) of 13 nC at 10V. The input capacitance (Ciss) is specified at 450 pF at 25V. Operating across a temperature range of -55°C to 150°C (TJ), this MOSFET is suitable for power supply, lighting, and motor control applications. It is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.6Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.5W (Ta), 50W (Tc) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 13 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 450 pF @ 25 V |
Request a Quote
Clients Also Buy
FQT1N60CTF-WS
MOSFET N-CH 600V 200MA SOT223-4
FQD7P20TM
MOSFET P-CH 200V 5.7A DPAK
FQD12N20LTM
MOSFET N-CH 200V 9A DPAK
