FQD3N60CTM-WS
MOSFET N-CH 600V 2.4A DPAKManufacturer: onsemi
Categories: Single FETs, MOSFETs
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onsemi's FQD3N60CTM-WS is a QFET® series N-Channel Power MOSFET designed for demanding applications. This TO-252AA packaged device offers a 600V drain-source breakdown voltage and a continuous drain current of 2.4A (Tc) at 25°C, with a maximum power dissipation of 50W (Tc). Featuring a low on-resistance of 3.4 Ohm maximum at 1.2A and 10V Vgs, and a low gate charge of 14 nC maximum, this MOSFET is optimized for efficient switching. The input capacitance (Ciss) is rated at 565 pF maximum at 25V. This component is suitable for use in power supply, lighting, and motor control applications. It supports a gate-source voltage range of ±30V and a threshold voltage of 4V maximum. The device is supplied in Tape & Reel packaging.
Additional Information
Series: QFET®RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.4A (Tc) |
| Rds On (Max) @ Id, Vgs | 3.4Ohm @ 1.2A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 50W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | TO-252AA |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Drain to Source Voltage (Vdss) | 600 V |
| Gate Charge (Qg) (Max) @ Vgs | 14 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 565 pF @ 25 V |
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